Abstract

Recent advances in VNA HW and measurement algorithms provide the means to accurately measure and model the RF and Microwave nonlinear characteristics of devices.  This presentation will discuss the error correction algorithms used to accurately measure nonlinear device characteristics, introduce a new nonlinear measurement scattering parameter (X-parameter), new measurements of memory effects in nonlinear devices, and recent algorithm advancements RF and DC pulse detection.

Biography

Loren Betts received a B.Sc. degree in computer engineering from the University of Alberta, Edmonton, Alberta, Canada in 1997. He received a M. Sc. degree in electrical engineering from Stanford University, Stanford, California in 2003. Currently he is working on his Ph.D. degree in electrical engineering from The University of Leeds, Leeds, UK.  He is currently a senior engineer at Agilent Technologies focusing on complex stimulus/response measurements and modeling of nonlinear devices utilizing vector network analyzers. He originated and co-developed recent developments in pulse measurement detection algorithms utilized in current Agilent VNAs. He was also instrumental in driving the current multiport measurement and control schemes used in current Agilent VNAs.  He has also authored or coauthored numerous articles in magazines, trade journals, conferences, and customer presentations.

Resources

Loren’s slides from the presentation and images from the event are provided below.